Epitaxial growth of Y-doped SrZrO3 films on MgO by pulsed laser deposition
نویسندگان
چکیده
Epitaxial thin films of Y-doped SrZrO3 have been grown on MgO~001! by pulsed laser deposition. The deposition process has been performed at temperatures of 1000–1200 °C and at an oxygen pressure of 1.5310 mbar. The samples are characterized by Rutherford backscattering spectrometry/channeling ~RBS/C! and x-ray diffraction ~XRD!. We found an epitaxial relationship of SrZrO3 (0k0) @101#iMgO ~001! @100#. Good crystalline quality is confirmed by RBS/C minimum yield values of 9% and a FWHM of 0.35° of the XRD rocking curve. © 1996 American Institute of Physics. @S0021-8979~96!09705-1#
منابع مشابه
Interface control by homoepitaxial growth in pulsed laser deposited iron chalcogenide thin films
Thin film growth of iron chalcogenides by pulsed laser deposition (PLD) is still a delicate issue in terms of simultaneous control of stoichiometry, texture, substrate/film interface properties, and superconducting properties. The high volatility of the constituents sharply limits optimal deposition temperatures to a narrow window and mainly challenges reproducibility for vacuum based methods. ...
متن کاملMagnetic Phase Formation in Self-Assembled Epitaxial BiFeO3-MgO and BiFeO3-MgAl2O4 Nanocomposite Films Grown by Combinatorial Pulsed Laser Deposition.
Self-assembled epitaxial BiFeO3-MgO and BiFeO3-MgAl2O4 nanocomposite thin films were grown on SrTiO3 substrates by pulsed laser deposition. A two-phase columnar structure was observed for BiFeO3-MgO codeposition within a small window of growth parameters, in which the pillars consisted of a magnetic spinel phase (Mg,Fe)3O4 within a BiFeO3 matrix, similar to the growth of BiFeO3-MgFe2O4 nanocomp...
متن کاملDependence of Magnetic Properties on Laser Ablation Conditions for Epitaxial La_{0.6}Sr_{0.4}MnO_{3} Thin Films Grown by Pulsed Laser Deposition
Epitaxial La0:6Sr0:4MnO3 (LSMO) thin films were grown by pulsed laser deposition. Relationships between magnetic properties of LSMO epitaxial thin films and ablation conditions such as ablated spot area and total incident laser energy in a pulsed laser deposition technique were studied. Ablated spot area was controlled by changing the focus lens position and total laser energy. Epitaxial growth...
متن کاملOrientation of MgO thin films on Si(001) prepared by pulsed laser deposition
Pulsed laser deposition method was employed to grow MgO thin films with preferred orientation on bare Si(100) and SiO2/Si(100) substrates. The orientation of MgO thin films was systematically investigated by varying deposition parameters. XRD analysis showed that the preferred orientation of MgO thin films would change from (111) to (100) when laser fluence decreased and oxygen pressure increas...
متن کاملHomo- and hetero-epitaxial growth of hexagonal and cubic MgxZn1−x O alloy thin films by pulsed laser deposition technique
In this work, we describe the homoand hetero-epitaxial growth of hexagonal and cubic MgxZn1−xO thin films on lattice matched substrates of c-Al2O3, ZnO, MgO and SrTiO3. The crystalline quality, composition and epitaxial nature of the alloy films are obtained by x-ray diffraction and Rutherford backscattering spectroscopy (RBS) techniques. The RBS channeling yields are in the range 3–8% for homo...
متن کامل